Cvd Graphene Copper Etching

Synthesis of graphene films on copper foils by chemical vapor deposition.

Cvd graphene copper etching.

2a and b show the etching time evolution of the graphene domain size on the copper foils etched by an fecl 3 or an nh 4 2 s 2 o 8 etchant. Wei guo feng jing jian xiao ce zhou yuanwei lin shuai wang. We report a simple clean and highly anisotropic hydrogen etching method for chemical vapor deposited cvd graphene catalyzed by the copper substrate. For the fecl 3 etchant we found that the average size of the.

By exposing cvd graphene on copper foil to hydrogen flow around 800 c we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition we found that the etching is temperature dependent. After the copper was etched the pmma pva graphene block was rinsed with deionized water three times at 0 c and transferred onto a 100 nm thick sio 2 si substrate. Here to investigate the size and density of the graphene domains the cvd growth of graphene was terminated by stopping the ch 4 feedstock prior to covering the entire cu surface.

Figure 4 shows the raman spectra of the cvd grown bilayer graphene transferred onto pet wafers using the three different etching solutions. The pmma pva graphene copper foil block was floated on the surface of a solution of 0 3 m ammonium persulfate aldrich 98 at 0 c for 24 h to etch the copper foil.